Coexistence of Ferroelectricity and Metallicity in Weakly Coupled ( SnSe ) 1.16 ( NbSe 2 ) Crystal
Cheng Jia, Wen Huang, Haobo Yang, Chaojie Luo, Lili Jiang, Shuangxiang Wu, Ming Li, Minghui Fan 等 10 位
University of Science and Technology of China Henan Academy of Sciences Hefei National Center for Physical Sciences at Nanoscale Hefei University of Technology
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Ferroelectric metals, traditionally considered mutually exclusive, face enduring challenges owing to screening effects of itinerant electrons on ferroelectric order. However, in certain van der Waals (vdW) heterostructures, two-dimensional materials with distinct structural and physical properties can be alternatingly arranged in layers, retaining their individual characteristics and thereby enabling the coexistence of ferroelectricity and metallicity. Here, we report the coexistence of robust in-plane ferroelectricity and exceptional metallicity in a natural vdW superlattice (SnSe)_{1.16}(NbSe_{2}) crystal, exhibiting high-density carriers (>10^{21} cm^{-3}), superconductivity (T_{c} ∼3.25 K), and Curie temperature up to 383 K. The weak-coupling electronic and phononic natures stabilize in-plane ferroelectricity against screening by high-density carriers, confirming the decoupled electron mechanism. Moreover, we demonstrate the first ferroelectric memristor, where the metallic channel conductance is manipulated through polarization dynamics. Our Letter establishes a universal platform for designing multi-order parameters quantum-confined materials, and opens new avenues for energy-efficient functional electronics.
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材料 / 化学2D Materials and Applications
Topological Materials and Phenomena · Electronic and Structural Properties of Oxides
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