Atomically Thin Al2O3 Films for Tunnel Junctions

Metal-insulator-metal tunnel junctions (MIMTJs) have become a fundamental enabling technology for microelectronics, and obtaining a well controlled, atomically thin, high-quality insulating tunnel barrier is key to their progress. Through experiment and simulations, the authors establish an atomic-layer deposition process to make ultrathin Al${}_{2}$O${}_{3}$ barriers of superior quality to industry-standard AlO${}_{x}$. Their method can improve magnetic tunnel junctions or Josephson junctions, for example, and thus a host of applications.