Influence of exciton localization on recombination line shapes:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As/GaAs quantum wells as a model
R. Schnabel, Ralf Zimmermann, D. Bimberg, H. Nickel, R. Lösch, W. Schlapp
Technische Universität Berlin Halbleiterlabor of the Max-Planck-Society
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We present an approach for the optical interband density and for luminescence line shapes of quantum-well excitons by considering the localization of the excitonic center of mass due to potential fluctuations. The localization-induced violation of the K=0 selection rule effects considerably the high-energy side of the recombination line shape. Perfect agreement between line-shape simulations and photoluminescence spectra of ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As/GaAs quantum wells is obtained over the full temperature range from T=2 K up to 120 K. Furthermore, by introducing a quantitative measure of the degree of localization we find the exciton motion restricted to about 13 nm in the present case.
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