High-Temperature Quantum Anomalous Hall Effect in n − p Codoped Topological Insulators

The quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon that manifests as a quantized transverse conductance in response to a longitudinally applied electric field in the absence of an external magnetic field, and it promises to have immense application potential in future dissipationless quantum electronics. Here, we present a novel kinetic pathway to realize the QAHE at high temperatures by n-p codoping of three-dimensional topological insulators. We provide a proof-of-principle numerical demonstration of this approach using vanadium-iodine (V-I) codoped Sb_{2}Te_{3} and demonstrate that, strikingly, even at low concentrations of ∼2% V and ∼1% I, the system exhibits a quantized Hall conductance, the telltale hallmark of QAHE, at temperatures of at least ∼50 K, which is 3 orders of magnitude higher than the typical temperatures at which it has been realized to date. The underlying physical factor enabling this dramatic improvement is tied to the largely preserved intrinsic band gap of the host system upon compensated n-p codoping. The proposed approach is conceptually general and may shed new light in experimental realization of high-temperature QAHE.