Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
B. Diény, Mairbek Chshiev
Centre National de la Recherche Scientifique Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Institut Nanosciences et Cryogénie
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摘要与影响
In spintronics devices, magnetic materials are used as polarizers or analyzers for electron spin. Magnetic anisotropy defines the orientation for magnetization and polarization of spin currents traversing the material. This review focuses on perpendicular magnetic anisotropy which arises at magnetic metal/oxide interfaces. This anisotropy plays a role in the magnetic memory based on magnetic tunnel junctions. Aspects of the anisotropy are described in various applications and in the field of spintronics research.
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