Thermal Analysis and Modeling of Gallium Oxide Diode-based Half Bridge Power Module

Gallium oxide (Ga2O3) devices have gained significant attention due to their potential in high-voltage applications. However, it's crucial to determine the junction temperature of the device to ensure the longevity of the power module. Hence, the thermal challenge of power module packaging with Ga2O3device and an easier junction temperature measurement approach is addressed in this paper. The half-bridge module was designed and packaged adopting the flipped-chip top-side cooling method. The experimental results of a packaged half-bridge module with Ga2O3diode are reported. The junction temperature of the diode was measured by combining the self-heating test results and the thermal characterization curve. Finally, a thermal model was built, and a simulation was performed to further validate the experimental data. Flipped-chip top-side cooling showed 92.57% and 16.02% improvement in junction thermal resistance and total thermal resistance, respectively, than bottom-side cooling.