Polarity Control in WSe2 Field-Effect Transistors using Dual Gate Architecture

This study reports the polarity control in WSe2FET using global p+-type Si back gate architecture in conjunction with Al gate. By using WSe2as channel material and Au as source and drain contact metal, both hole and electron can be injected into the channel layer. As a result, p-type and n-type operation was experimentally demonstrated by applying appropriate back bias condition.