Trade-off Between Thermal Budget and Thickness Scaling: A Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films Sub-5nm
Chui-Yi Chiu, Sourav De, Chen-Yi Cho, Tuo‐Hung Hou
National Yang Ming Chiao Tung University
阅读操作
确认中在文库中上传 PDF 后可生成中文音频讲解。
摘要与影响
The article reports a tradeoff between back-end-of-line (BEOL) compatibility of annealing temperature (≥400°C) and thickness scaling of hafnium-zirconium-oxide (HZO) solid solution-based ferroelectric thin films with a ratio of hafnium and zirconium as 1:1. Our study shows the scaling limit up to 5 nm for maintaining the BEOL compatibility in HZO films developed with Tetrakis (ethylmethylamido) hafnium (TEMAH) and Tetrakis (ethylmethylamido) zirconium (TEMAZ) precursors.
逐年被引趋势
关键指标
同类平均 = 1
同领域 · 同年份 · 同类型
Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。
AI 辅助阅读
依据：摘要
可就本文提问；依据不足时会说明。
学术脉络
学科主题
工程Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices · Advanced Memory and Neural Computing
参考文献 23
此处列出前 3 条
引用本文 7
按被引量排序，此处列出前 3 条