A BSIM4-based SPICE Model for MoS 2 Transistors Incorporating Trap Effects for Integrated Circuit Applications

For the first time, we employ the industry-standard BSIM4 framework to develop a compact model for two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors. We present the first integration of dynamic trap effects into 2D semiconductors compact model by incorporating a dedicated RC subcircuit. This approach accurately describes the capture and emission processes of interface traps, enabling highly precise transient circuit simulations. Such simulations lead to the largest number of logic circuit types reported to date in the field of 2D integrated circuits. Furthermore, we successfully construct a comprehensive MoS2 logic cell library, demonstrating the potential of the model for the large-scale integrated circuit design. This work establishes a novel methodology for developing compact models tailored to emerging semiconductor technologies.