Modeling of STT-MTJ for low power embedded memory applications: A comparative review

Spin Transfer Torque RAM (STT-RAM) has emerged as a potential candidate for universal memory. The lack of comprehensive electrical modeling for the device is hindering the adaption and design space exploration of the device. In this paper, we investigate the existing models of Spin Transfer Torque - Magnetic Tunnel Junction (STT-MTJ) along with the different implementation tools available (Spice, Verilog-A, Micro-Magnetic Simulator). The study will select the model which most resembles the device's physical parameters including static and dynamic stochastic intrinsic properties. In addition, the selected model is used to investigate several design techniques that can improve power reduction for embedded applications.