研究论文
Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory
Sunghyun Yoon, Sung-In Hong, Ga-Ram Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Chang-Han Kim, Kyunghoon Min
SK Group (South Korea)
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摘要与影响
摘要 · 完整
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.
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学术脉络
学科主题
工程Ferroelectric and Negative Capacitance Devices
Semiconductor materials and devices · Advanced Memory and Neural Computing
参考文献 8
Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures
被引 72Sung Kyun Lee, Yong Tae Kim, Seong-Il Kim · Journal of Applied Physics · 2002
Ferroelectric deep trench capacitors based on Al:HfO<sub>2</sub> for 3D nonvolatile memory applications
被引 113P. Polakowski, S. Riedel, Wenke Weinreich · 2014
Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films
被引 520Chun‐Lin Jia, Shao‐Bo Mi, K. Urban · Nature Materials · 2007
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引用本文 28
Strategies for a Wide Memory Window of Ferroelectric FET for Multilevel Ferroelectric VNAND Operation
被引 29Ilho Myeong, Hyoseok Kim, Seung‐Hyun Kim · IEEE Electron Device Letters · 2024
Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications
被引 24Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song · IEEE Electron Device Letters · 2024
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
被引 23David Lehninger, Franz Müller, Yannick Raffel · Advanced Electronic Materials · 2025
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