Benchmarking 193 nm photoresists for etch resistance

The semiconductor industry plans to use 193 nm resist for patterning in the 130 to 100 nm node. The suppliers of 193 nm resist continue to introduce improved versions of their present resists and additional resists based on new chemical structures. In the advanced technology development facility (ATDF) of International SEMATECH we have developed benchmarking methodology to provided initial screening data on lithographic and etch performance on a number of 193 nm resists to our member companies. This paper outlines our benchmarking approach and gives initial benchmarking results for the etch performance.