A CMOS smart temperature sensor with a 3/spl sigma/ inaccuracy of /spl plusmn/0.1/spl deg/C from -55/spl deg/C to 125/spl deg/C
Michiel A. P. Pertijs, Kofi A. A. Makinwa, Johan H. Huijsing
Delft University of Technology Microchip Technology (United States)
阅读操作
确认中在文库中上传 PDF 后可生成中文音频讲解。
摘要与影响
A smart temperature sensor in 0.7 /spl mu/m CMOS is accurate to within /spl plusmn/0.1/spl deg/C (3/spl sigma/) over the full military temperature range of -55/spl deg/C to 125/spl deg/C. The sensor uses substrate PNP transistors to measure temperature. Errors resulting from nonidealities in the readout circuitry are reduced to the 0.01/spl deg/C level. This is achieved by using dynamic element matching, a chopped current-gain independent PTAT bias circuit, and a low-offset second-order sigma-delta ADC that combines chopping and correlated double sampling. Spread of the base-emitter voltage characteristics of the substrate PNP transistors is compensated by trimming, based on a calibration at one temperature. A high trimming resolution is obtained by using a sigma-delta current DAC to fine-tune the bias current of the bipolar transistors.
逐年被引趋势
关键指标
同类平均 = 1
同领域 · 同年份 · 同类型
Google Scholar 与 OpenAlex 的被引统计范围不同,数值存在差异属正常。
AI 辅助阅读
依据:摘要
可就本文提问;依据不足时会说明。
学术脉络
学科主题
工程Analog and Mixed-Signal Circuit Design
Sensor Technology and Measurement Systems · Radio Frequency Integrated Circuit Design
参考文献 17
此处列出前 3 条
引用本文 360
按被引量排序,此处列出前 3 条