A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors
Zikang Lin, Xiaohui Wu, Shujing Zhao, Weihua Liu, Xin Li, Li Geng, Chuanyu Han
Xi'an Jiaotong University
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摘要与影响
In this study, VO2Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO2Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, inter-spike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. Additionally, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs).
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工程Advanced Memory and Neural Computing
Neural Networks and Reservoir Computing · Ferroelectric and Negative Capacitance Devices
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