Characterization of FeCl3Intercalation Doped CVD Few-Layer Graphene

Intercalation doping has been theoretically and experimentally studied on chemical vapor deposition synthesized few-layer graphene. Density functional theory calculations identified FeCl3as a good dopant to reduce the sheet resistance of few-layer graphene. A simple vapor transfer method is employed to dope graphene. The successful doping is confirmed by the Raman spectra as well as the electrical measurements. After doping, graphene shows p-type conducting behavior and its conductance is significantly enhanced compared with that of undoped graphene. Three-layer graphene exhibited a sheet resistance of 40 Ω/□, while four-layer doped graphene has even smaller sheet resistance of 20 Ω/□, with transmittance ≥90% for both cases, which provide the best combination of sheet resistance and transmittance among all previously reported transparent conductors.