Simulation of a 3.5 kV 4H-SiC/Ga2O3 E-mode MISFET With Integrated Reverse-Conducting Heterojunction and Hetero-Channel Diode

In this letter, a novel 4H-SiC/Ga2O3 Hetero-Channel Ga2O3 MISFET (HC-MISFET) for E-mode operation and low reverse conduction loss is proposed and demonstrated by experimentally calibrated TCAD. A p-type 4H-SiC is integrated on the top of Ga2O3 to form the inversion channel for E-mode operation. A deep trench p-NiO near the trench gate is firstly used to suppress the electric field in the Al2O3 gate dielectric and improve the dielectric breakdown voltage (BV). Besides, reverse p-NiO/n-Ga2O3 Heterojunction diode (HJD) and 4H-SiC/p-NiO Hetero-Channel Diode (HCD), having a low turn-on voltage, are integrated to reduce the reverse free-wheeling loss. The simulated BV of the HC-MISFET reaches ~3.58 kV (considering a reliable Al2O3 electric field of 5.3 MV/cm) with specific on-resistance (${R}_{\textit {on},\textit {sp}}$) being 7 m$\Omega \cdot $cm2. Compared to Fin-gate MISFET, Baliga’s Figure of Merit of the HC-MISFET reaches 1.83 GW/cm2, which is improved by 60.5%. Besides, the turning-on and turning-off power loss are reduced by 26% and 65%, respectively. Moreover, the maximum temperature raise in every switching period is reduced by 1.5 K and 9.9 K for the free-wheeling device and switching device, respectively.