Fully Monolithic Integration of GaN-Based Micro-LED and AlGaN/GaN MIS-HEMT Driving Circuit

This letter demonstrates a fully monolithic pixel platform integrating a micro-light-emitting diode (μLED) with a two-transistor-one-capacitor (2T1C) driver circuit. The 2T1C configuration, comprising two AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and a metal-insulator-metal (MIM) capacitor, is fabricated with the μLED on a shared epitaxial structure. The MIS-HEMT shows a high drain current density of 253 mA/mm and a minimal gate leakage current of 100 pA/mm. Leveraging the superior driving capabilities and good gate insulation of the MIS-HEMTs, the 2T1C circuit performs precise control and fast switching operations. A maximum operating frequency of 500 kHz is reached,markedly improving the pixel update rate each frame for display application and the pixel modulation frequency for high-speed visible light communication.