A W-Band High-Gain Differential LNA Using Cross-Coupled Neutralization Capacitors in 65-nm CMOS

This paper presents the design of a W-band low noise amplifier (LNA) fabricated in 65-nm CMOS. The LNA is composed of a four-stage differential common-source cascade structure and utilizes the cross-coupled neutralization capacitors to maximize the power gain. Measurement results shows that the proposed LNA exhibits a peak gain of 22 dB at 90 GHz with 10 GHz 3 dB bandwidth. The minimum noise figure of 8.4 dB is obtained at 94 GHz. The proposed LNA consumes a power of 56 mW with 1 V dc supply and the total chip area, including the pads, is 0.636 mm2. It is designed to realize high-integration, high-reliability, and high-power RF front-end.