Review of the Failure Mechanism and Methodologies of IGBT Bonding Wire

In the welding insulated gate bipolar transistor (IGBT) module, the module failure caused by bonding wire failure accounts for about 70% of the total module failure. Therefore, it is essential to improve the reliability of the IGBT module bonding wire. This article is devoted to a comprehensive review of the mechanism of IGBT bonding wire degradation and failure. The development and progress of related research methodologies on the reliability of the IGBT module bonding wire are introduced, including multiphysical field simulation technology, accelerated aging test (AAT), lifetime prediction model, and condition monitoring technology.