Composite Behavior of Multiple Memristor Circuits
Ram Kaji Budhathoki, Maheshwar Pd. Sah, Shyam Prasad Adhikari, Hyongsuk Kim, Leon Ong Chua
Jeonbuk National University University of California, Berkeley
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摘要与影响
Composite characteristics of the parallel and serial connections of memristors are investigated. The memristor is one of the fundamental electrical elements, which has recently been successfully built. However, its electrical characteristics are not yet fully understood. When multiple memristors are connected to each other, the composite behavior of the devices becomes complicated and is difficult to predict, due to the polarity dependent nonlinear variation in the memristance of individual memristors. In this work, we investigate the relationships among flux, charge, and memristance of diverse composite memristors, using both linear and nonlinear memristor models, and analyze the characteristics of complex memristor circuits.
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工程Advanced Memory and Neural Computing
Electrical and Thermal Properties of Materials · Ferroelectric and Negative Capacitance Devices
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