A SPICE Model for Ambipolar 2-D-Material Photoelectric Floating Gate Field-Effect Transistors

The unique photoelectric response properties of 2-D material (2DM)-based floating gate field-effect transistors (FGFETs) enable it for potential neuromorphic computing applications. However, a reliable SPICE model, which is important for exploring FGFETs application at the circuit level, has rarely been reported. In this work, we proposed a reliable SPICE model for the 2DM-based FGFETs to simulate its photoelectric response properties. The typicalI–Vcharacteristics of FGFETs are successfully simulated by adoptingF–Ntunneling mechanism. Additionally, the normally photoresponse properties are achieved in this SPICE model based on Poole–Frenkel (PF) tunneling and large injection mechanism. Furthermore, to calculate the density of carriers, a functional subcircuit is integrated in this SPICE model for effectively solving Lambert-Wfunction. This SPICE model would be benefit for exploring the potential applications of 2DM-based FGFETs in circuit level.