High-Performance Near-Infrared Photoresponsive Field-Effect Transistors Based on ZnO/PbPc Planar Heterojunction With Al-Buried Electrode and Au Electrode

These ZnO–organic heterojunction photoresponsive field-effect transistors (PhFETs) offer enhanced near-infrared (NIR) sensitivity through synergistic organic absorption and ZnO charge transport. We engineer a ZnO/PbPc heterojunction device with buried Al electrodes (Al-buried-device), outperforming Al- and Au- electrode counterparts. The optimized architecture demonstrates 3.48-A/W responsivity and 534% EQE at 808nm (13.3mW/cm${}^{{2}},{V}_{d} =50$V), surpassing Au-device metrics (2.52 A/W, 388% EQE). Performance superiority stems from three factors: 1) buried-electrode-enhanced carrier collection; 2) efficient ZnO/PbPc exciton dissociation; and 3) optimized charge carrier transport pathways. This electrode-embedded/buried design resolves critical interfacial barriers while maximizing photon utilization, providing a viable strategy for high-performance NIR photodetectors in flexible optoelectronics.