A Crosstalk-Free GaN-on-Si Power Integration Platform for Integrated Half-Bridge Circuits and Bidirectional Switches

This work presents a holistic GaN-on-Si$p$-GaN gate double-channel (DC) high-electron-mobility transistor (HEMT) power integration platform that supports monolithically integrated bridge circuits and bidirectional switch (BDS) that are free of substrate crosstalk and back-gating effects over a temperature range from room temperature (RT) to$125~^{\circ }$C. The proposed platform solely involves planar HEMT fabrication process and only requires standard low-cost and low-resistivity Si substrates. The DC structure creates a critical hole-spreading channel sandwiched between two closely coupled 2-D electron gas (2DEG) channels. In theon-state, the hole-spreading channel is able to store and distribute holes injected from the$p$-GaN, effectively compensating buffer trapping and shielding the 2DEG channels from substrate-induced crosstalk. In theoff-state, the excessive holes quickly recombine with the 2DEG in the nondepleted regions, preserving the voltage blocking capability.