研究论文

Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited)

Geok Ing Ng, Hanlin Xie, Hanchao Li

Agency for Science, Technology and Research　Institute of Microelectronics　Nanyang Technological University

年份2024

DOI10.1109/tencon61640.2024.10902922

原文https://doi.org/10.1109/tencon61640.2024.10902922

内容与影响

摘要 · 完整

GaN-on-Si technology has recently emerged as a viable alternative to GaN-on-SiC technology for future communication applications. This paper highlights the R&D work carried out at the Nanyang Technological University (NTU) to push the performance boundaries of RF GaN-on-Si technologies. An overview of the recently established National GaN Technology Centre (NGTC) and its technologies offerings will also be presented.

逐年被引趋势

暂无年度引用数据

关键指标

被引次数 · OpenAlex

0.00

领域内被引倍数
同类平均 = 1

前 59%

引用位次
同领域 · 同年份 · 同类型

参考文献

Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。

AI 辅助阅读

依据：摘要

论文问答

依据：摘要 · 当前未解析全文

回答优先基于摘要、文献信息与可获取全文；依据不足时会明确说明。

依据：当前详情页数据

学术脉络

学科主题

物理

GaN-based semiconductor devices and materials

Radio Frequency Integrated Circuit Design · Semiconductor materials and devices

参考文献 9

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

Zhi Hong Liu, Geok Ing Ng, S. Arulkumaran · IEEE Electron Device Letters · 2009

被引 77

Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved ${g}_{{m}}$ and ${f}_{\textsf {T}}$ Linearity

Weichuan Xing, Zhihong Liu, Haodong Qiu · IEEE Electron Device Letters · 2017

被引 44

Planar Nanostrip-Channel Al<sub>2</sub>O<sub>3</sub>/InAlN/GaN MISHEMTs on Si With Improved Linearity

Weichuan Xing, Zhihong Liu, Kumud Ranjan · IEEE Electron Device Letters · 2018

被引 32

此处列出前 3 条

施引文献 -

暂无施引文献

内容与影响

摘要 · 完整

逐年被引趋势

暂无年度引用数据

关键指标

被引次数 · OpenAlex

0.00

领域内被引倍数
同类平均 = 1

前 59%

引用位次
同领域 · 同年份 · 同类型

参考文献

Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。