A 0.1–20.1-GHz Wideband Noise-Canceling gm-Boosted CMOS LNA With Gain-Reuse

This article presents a novel wideband low-noise amplifier (LNA) topology that incorporates noise cancellation in a$g_m$-boosted common gate (CG) LNA by reusing the inverting amplifier used for$g_m$-boosting as a parallel gain stage A$g_m$-boosted CG stage provides the wideband input matching while the current reuse (CR) inverting amplifier is simultaneously used for boosting$g_m$, improving gain, and canceling noise. Shunt and series inductive peaking techniques are implemented to extend the bandwidth of the LNA. The LNA is fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm CMOS process and occupies a die area of 0.263 mm2. The measurement results indicate the combination of these techniques produces an LNA with a 20-GHz bandwidth, an average gain of 12 dB, an average noise figure (NF) of 3.87 dB, and a 2.53-dBm peak input-referred third-order intercept point (IIP3) while consuming 13.2 mW at 1.2 V, resulting in the highest figure of merit (FoM) among the reported state-of-the-art LNAs.