Single Event Effects in 90-nm Phase Change Memories

Single event effects are investigated in 90-nm phase change memories. The cells are shown to be insensitive to heavy-ion strikes and will likely remain so for a few more generations. Possible physical mechanisms leading to upsets in future generations are discussed. Errors and functional interrupts, in addition to single event latch-up, were observed during read, word and buffer program due to strikes in the peripheral circuitry.