Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging
Marie‐Laure Locatelli, Rabih Khazaka, Sombel Diaham, Congduc Pham, M. J. Bechara, Sorin Dinculescu, Pierre Bidan
Centre National de la Recherche Scientifique Université Toulouse III - Paul Sabatier Université Fédérale de Toulouse Midi-Pyrénées Institut National Polytechnique de Toulouse
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摘要与影响
High-temperature power electronics represent an increasing demand. Higher power density or severe ambient temperature applications become the trend, while silicon carbide components with 250-300 °C Tjmax are emerging. Among materials used in high-voltage power module, soft encapsulants play a significant role in improving both semiconductor die and module package voltage ratings, especially under enhanced electrical and thermal constraints. In operation close to their upper temperature limit, two silicone materials were selected among the most thermally stable soft insulators available today. Up to 300 °C, dielectric properties and their stability under isothermal aging in air ambient tests were characterized. The gel, tested using sandwich structures, exhibits cracking of its exposed-to-air face, at an aging temperature as low as 250 °C after less than 100 h. The elastomer, tested as free films, presents no cracking, no degraded electrical characteristics, and a 6 % relative mass loss, after 500 h aging. Moreover, the elastomer insulating properties, at low and high electric field, remains stable up to 300 °C (short-term tests), contrary to the gel which shows a strong increase in dc electrical conductivity. So the elastomer shows promising properties for improved encapsulation performance at 250 °C, to be further investigated in package configurations.
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