3D charge and 2D phonon transports leading to high out-of-plane <i>ZT</i> in n-type SnSe crystals
Cheng Chang, Minghui Wu, Dongsheng He, Yanling Pei, Chaofeng Wu, Xuefeng Wu, Hulei Yu, Fangyuan Zhu 等 14 位
Beihang University Southern University of Science and Technology Tsinghua University University of Hong Kong
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摘要与影响
of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
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材料 / 化学Advanced Thermoelectric Materials and Devices
Chalcogenide Semiconductor Thin Films · Thermal properties of materials
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