Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe
Tian‐Ran Wei, Min Jin, Yuecun Wang, Hongyi Chen, Zhiqiang Gao, Kunpeng Zhao, Pengfei Qiu, Zhiwei Shan 等 13 位
Shanghai Jiao Tong University Chinese Academy of Sciences Shanghai Institute of Ceramics State Key Laboratory of Metal Matrix Composites
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摘要与影响
Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.
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