研究论文
High-speed 340 Gbps PAM4 and 450 Gbps PAM6 Operations of Narrow High-Mesa EML
Shinya Okuda, Asami Uchiyama, Toshiya Tsuji, Yohei Hokama, Koki Kihara, Mizuki Shirao, Takeshi Yamatoya, Yasuhiro Yamauchi
Mitsubishi Electric (Japan)
内容与影响
摘要 · 完整
We successfully achieved 340 Gbps PAM4 and 450 Gbps PAM6 operations using a 106 GHz 3-dB bandwidth narrow high-mesa EML, indicating its potential for 300 Gbps and 400 Gbps transmissions with FEC.
逐年被引趋势
420
425
26
关键指标
5
被引次数 · OpenAlex
17.39
领域内被引倍数
同类平均 = 1
同类平均 = 1
前 0.7%
引用位次
同领域 · 同年份 · 同类型
同领域 · 同年份 · 同类型
0
参考文献
Google Scholar 与 OpenAlex 的被引统计范围不同，数值存在差异属正常。
AI 辅助阅读
依据：摘要
论文问答
依据：摘要 · 当前未解析全文
回答优先基于摘要、文献信息与可获取全文；依据不足时会明确说明。
学术脉络
学科主题
工程Semiconductor materials and devices
VLSI and Analog Circuit Testing · Copper Interconnects and Reliability
参考文献 0
暂无参考文献明细
施引文献 5
High-Speed 340 Gbps PAM4 and 450 Gbps PAM6 Operations of Narrow High-Mesa EML
被引 3Shinya Okuda, Asami Uchiyama, Toshiya Tsuji · Journal of Lightwave Technology · 2025
Integrated Optical Link on Si Wafer Using Low Energy Membrane InP-Based Photonic Devices
被引 2Tatsurou Hiraki, Koji Takeda, Takuro Fujii · Journal of Lightwave Technology · 2025
110 GHz Bandwidth Flip-Chip Bonded EML for High-Speed IM-DD Applications
被引 1Kei Masuyama, Mizuki Shirao, Asami Uchiyama · 2025
按被引量排序，此处列出前 3 条