研究论文
Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC
Glenn M. Beheim, Laura J. Evans
Glenn Research Center
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学术脉络
学科主题
工程Plasma Diagnostics and Applications
Silicon Carbide Semiconductor Technologies · Metal and Thin Film Mechanics
参考文献 4
Asymmetric microtrenching during inductively coupled plasma oxide etching in the presence of a weak magnetic field
被引 79M. Schaepkens, G. S. Oehrlein · Applied Physics Letters · 1998
Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications
被引 91Liudi Jiang, Rebecca Cheung, R. Brown · Journal of Applied Physics · 2003
Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide
被引 15Glenn M. Beheim · Mechanical engineering series · 2001
此处列出前 3 条
引用本文 23
Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching
被引 74Karen M. Dowling, Elliot Ransom, Debbie G. Senesky · Journal of Microelectromechanical Systems · 2016
Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review
被引 50Chaojiang Li, Yuxin Yang, Rui Qu · Journal of Materials Chemistry C · 2024
Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching
被引 44Julian A. Michaels, Lukas L. Janavicius, Xihang Wu · Advanced Functional Materials · 2021
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