研究论文
In Situ Flux Transient Monitoring and Correction During MBE Growth of Quantum Well Structures
F. G. Celii, Yung-Chung Kao, A. J. Katz
Texas Instruments (United States)
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物理Semiconductor Quantum Structures and Devices
Advanced Semiconductor Detectors and Materials · Nanowire Synthesis and Applications
参考文献 14
Detection and reduction of indium segregation during molecular-beam epitaxial growth of InGaAs/GaAs using in situ reflection mass spectrometry
被引 35Y. C. Kao, F. G. Celii, H. Y. Liu · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993
Incorporation/desorption rate variation at heterointerfaces in III–V molecular-beam epitaxy
被引 25K. R. Evans, C. E. Stutz, E. N. Taylor · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991
Arsenic pressure variations during oxide desorption from gallium arsenide prior to epitaxial deposition
被引 3A. J. SpringThorpe, Abdul Majeed, A. D. Priest · Applied Physics Letters · 1991
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引用本文 1
Experimental sensitivity analysis of pseudomorphic InGaAs/AlAs resonant-tunneling diodes
被引 37T. S. Moise, Y. C. Kao, A. J. Katz · Journal of Applied Physics · 1995
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