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Ultrawide-bandgap semiconductors: An overview
Man Hoi Wong, Oliver Bierwagen, Robert Kaplar, Hitoshi Umezawa
University of Massachusetts Lowell Paul Drude Institute for Solid State Electronics Forschungsverbund Berlin Sandia National Laboratories
来源Journal of materials research/Pratt's guide to venture capital sources
年份2021
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学术脉络
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材料 / 化学Ga2O3 and related materials
GaN-based semiconductor devices and materials · ZnO doping and properties
参考文献 183
Growth of Ga1-xBxN by Molecular Beam Epitaxy
被引 23V. Vezin, Satoshi Yatagai, Hiroyuki Shiraki · Japanese Journal of Applied Physics · 1997
High-Mobility Bismuth-based Transparent p -Type Oxide from High-Throughput Material Screening
被引 143Amit Bhatia, Geoffroy Hautier, Tan Nilgianskul · Chemistry of Materials · 2015
Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
被引 408Naoyuki Ueda, Hideo Hosono, Ryuta Waseda · Applied Physics Letters · 1997
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引用本文 159
Deep level defect states in β-, α-, and ɛ -Ga2O3 crystals and films: Impact on device performance
被引 113A. Y. Polyakov, В. И. Николаев, E. B. Yakimov · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2022
Dopants and defects in ultra-wide bandgap semiconductors
被引 56John L. Lyons, Darshana Wickramaratne, Anderson Janotti · Current Opinion in Solid State and Materials Science · 2024
Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives
被引 43Soo Ho Choi, Yongsung Kim, Il Jeon · Advanced Materials · 2024
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