研究论文
Hydrogen cleaning for high-quality conductive AlInN/GaN DBRs
Kana Shibata, Tsuyoshi Nagasawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
Meijo University
来源2022 28th International Semiconductor Laser Conference (ISLC)
年份2022
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摘要与影响
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We introduced hydrogen cleaning to a fabrication of n-type conductive AlInN/GaN DBRs to achieve both high conductivity and high material quality, resulting in a 40-pair conductive AlInN/GaN DBR with a low vertical resistance and a much lower surface pit density attributed to threading dislocations.
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学术脉络
学科主题
物理GaN-based semiconductor devices and materials
Semiconductor materials and devices · Metal and Thin Film Mechanics
参考文献 2
GaN-based vertical cavity surface emitting lasers with lateral optical confinements and conducting distributed Bragg reflectors
被引 17Ryosuke Iida, Yusuke Ueshima, Wataru Muranaga · Japanese Journal of Applied Physics · 2020
High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy
被引 15Takanobu Akagi, Yugo Kozuka, Kazuki Ikeyama · Applied Physics Express · 2020
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