The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap
Maciej Kamiński, K. Król, Norbert Kwietniewski, Marcin Myśliwiec, Mariusz Sochacki, Bartłomiej Stonio, Ryszard Kisiel, Agnieszka Martychowiec 等 14 位
Warsaw University of Technology Łukasiewicz Research Network Lodz University of Technology PDF Solutions (United States)
内容与影响
Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology. We also present a SiC technology and product roadmap.
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工程Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
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