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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules
Peisheng Liu, Yaohui Deng
Nantong University
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摘要 · 完整
With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...].
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学术脉络
学科主题
工程Silicon Carbide Semiconductor Technologies
Advanced DC-DC Converters · Thin-Film Transistor Technologies
参考文献 10
Thermal Loading and Lifetime Estimation for Power Device Considering Mission Profiles in Wind Power Converter
被引 461Ke Ma, Marco Liserre, Frede Blaabjerg · IEEE Transactions on Power Electronics · 2014
Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems
被引 697Ui‐Min Choi, Frede Blaabjerg, Kyo‐Beum Lee · IEEE Transactions on Power Electronics · 2014
Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review
被引 506Hyunseok Oh, Bongtae Han, Patrick McCluskey · IEEE Transactions on Power Electronics · 2014
此处列出前 3 条
引用本文 3
Improved ASHCPWM with Reduced IGBT Switching Actions and Kalman Filter-Based Zero-Sequence Suppression for Open-End Winding PMSM Drives
被引 0Yu Zhang, Mingzhe Qu, Hongjia Xie · Micromachines · 2026
Multi-scale junction temperature modeling and lifetime assessment of IGBT power modules using graph neural networks
被引 0Chunjiang Zhang, Mingyang Zhang, Zhizhong Kan · Microelectronics Journal · 2026
THERMAL MANAGEMENT APPROACHES FOR EMERGING ELECTRIC VEHICLE POWER INVERTER CONFIGURATIONS
被引 0Daitva Bali, Huseyin Bostanci · 2026
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