Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl₃ dry etching

We demonstrated GaN-based vertical-cavity surface emitting lasers (VCSELs) with 5–30 μ m wide nano-height cylindrical waveguide formed by BCl 3 etching. A 5 nm-depth etching with BCl 3 showed the most efficient current blocking at the interface of the etched p ++ -GaN and an ITO electrode among the cases with BCl 3 , Ar, or O 2 , which could be due to not only etching damages but also diffused B atoms into the etched surface. While room-temperature continuous-wave operations of the VCSELs with the large apertures were demonstrated, maximum light output power values of the large aperture VCSELs seemed limited by nonuniform current injection and device thermal resistances.