High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning

We proposed and investigated hydrogen cleaning for decreasing pits and threading dislocations generated at interfaces of GaN on AlInN in Si-doped graded AlInN/GaN DBRs. We found that hydrogen cleaning was very useful to suppress the threading dislocation generations, resulting in two orders of magnitude less than the case without hydrogen cleaning. A high-quality conductive Si-doped AlInN/GaN DBR was obtained with hydrogen cleaning, showing a maximum reflectivity of 99.8%, a low pit density of less than 10 6 cm −2 , and a reasonably low vertical resistance of 15 Ω.